Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source
Using a modified droplet epitaxy approach in metal-organic vapour phase epitaxy (MOVPE), we have grown InGaN quantum dots (QDs) on top of a 20-period AlN/GaN distributed Bragg reflector (DBR). The QDs were located at the centre ofa ca. 182 nm GaN layer. To complete the cavity a three-period SiOx/SiN...
| Main Authors: | , , , , , , |
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| Format: | Conference item |
| Published: |
2008
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