Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source

Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source

Using a modified droplet epitaxy approach in metal-organic vapour phase epitaxy (MOVPE), we have grown InGaN quantum dots (QDs) on top of a 20-period AlN/GaN distributed Bragg reflector (DBR). The QDs were located at the centre ofa ca. 182 nm GaN layer. To complete the cavity a three-period SiOx/SiN...

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Bibliographic Details
Main Authors: Oliver, R, Jarjour, A, Taylor, R, Tahraoui, A, Zhang, Y, Kappers, M, Humphreys, C
Format: Conference item
Published: 2008

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