The effect of V : III ratio on the growth of InN nanostructures by molecular beam epitaxy
We have investigated the growth of thin layers of indium nitride (InN) on gallium nitride (GaN) by molecular beam epitaxy (MBE) using two different nitrogen sources. Using thermally cracked ammonia as the nitrogen source, we explored the effect of the V:III ratio by varying the ammonia pressure. Wit...
| Main Authors: | , , , , , |
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| Format: | Conference item |
| Published: |
2003
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