The effect of V : III ratio on the growth of InN nanostructures by molecular beam epitaxy
We have investigated the growth of thin layers of indium nitride (InN) on gallium nitride (GaN) by molecular beam epitaxy (MBE) using two different nitrogen sources. Using thermally cracked ammonia as the nitrogen source, we explored the effect of the V:III ratio by varying the ammonia pressure. Wit...
| Main Authors: | , , , , , |
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| Format: | Conference item |
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2003
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| _version_ | 1826260898149302272 |
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| author | Oliver, R Norenberg, C Martin, MG Castell, M Allers, L Briggs, G |
| author_facet | Oliver, R Norenberg, C Martin, MG Castell, M Allers, L Briggs, G |
| author_sort | Oliver, R |
| collection | OXFORD |
| description | We have investigated the growth of thin layers of indium nitride (InN) on gallium nitride (GaN) by molecular beam epitaxy (MBE) using two different nitrogen sources. Using thermally cracked ammonia as the nitrogen source, we explored the effect of the V:III ratio by varying the ammonia pressure. With a low V:III ratio, we did not detect InN growth, and instead observed the formation of irregularly shaped indium islands on the GaN surface. With higher VAII ratios, nanostructure growth was observed for thin (approximate to2 ML) layers. Further deposition resulted in the growth of polycrystalline material. The differences between the two pressure regimes may be explained in terms of the interplay between equilibrium thermodynamics and growth kinetics. We performed similar experiments at higher VAII ratios using a modified nitrogen plasma source. Stranski-Krastanov growth occurred, and we were able to obtain high-temperature in vacuo STM images of the as-grown nanostructures. (C) 2003 Elsevier Science B.V. All rights reserved. |
| first_indexed | 2024-03-06T19:13:02Z |
| format | Conference item |
| id | oxford-uuid:17695569-766f-47ac-a674-799737dcb816 |
| institution | University of Oxford |
| last_indexed | 2024-03-06T19:13:02Z |
| publishDate | 2003 |
| record_format | dspace |
| spelling | oxford-uuid:17695569-766f-47ac-a674-799737dcb8162022-03-26T10:37:02ZThe effect of V : III ratio on the growth of InN nanostructures by molecular beam epitaxyConference itemhttp://purl.org/coar/resource_type/c_5794uuid:17695569-766f-47ac-a674-799737dcb816Symplectic Elements at Oxford2003Oliver, RNorenberg, CMartin, MGCastell, MAllers, LBriggs, GWe have investigated the growth of thin layers of indium nitride (InN) on gallium nitride (GaN) by molecular beam epitaxy (MBE) using two different nitrogen sources. Using thermally cracked ammonia as the nitrogen source, we explored the effect of the V:III ratio by varying the ammonia pressure. With a low V:III ratio, we did not detect InN growth, and instead observed the formation of irregularly shaped indium islands on the GaN surface. With higher VAII ratios, nanostructure growth was observed for thin (approximate to2 ML) layers. Further deposition resulted in the growth of polycrystalline material. The differences between the two pressure regimes may be explained in terms of the interplay between equilibrium thermodynamics and growth kinetics. We performed similar experiments at higher VAII ratios using a modified nitrogen plasma source. Stranski-Krastanov growth occurred, and we were able to obtain high-temperature in vacuo STM images of the as-grown nanostructures. (C) 2003 Elsevier Science B.V. All rights reserved. |
| spellingShingle | Oliver, R Norenberg, C Martin, MG Castell, M Allers, L Briggs, G The effect of V : III ratio on the growth of InN nanostructures by molecular beam epitaxy |
| title | The effect of V : III ratio on the growth of InN nanostructures by molecular beam epitaxy |
| title_full | The effect of V : III ratio on the growth of InN nanostructures by molecular beam epitaxy |
| title_fullStr | The effect of V : III ratio on the growth of InN nanostructures by molecular beam epitaxy |
| title_full_unstemmed | The effect of V : III ratio on the growth of InN nanostructures by molecular beam epitaxy |
| title_short | The effect of V : III ratio on the growth of InN nanostructures by molecular beam epitaxy |
| title_sort | effect of v iii ratio on the growth of inn nanostructures by molecular beam epitaxy |
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