A NEW MODEL FOR THE DIFFUSION OF ARSENIC IN POLYCRYSTALLINE SILICON
Experimental data are presented for the diffusion of arsenic in polycrystalline silicon (polysilicon) during a 15-min anneal at 900 °C. A new model is used to describe the data, which takes account of the different dopant diffusion rates in grains and in grain boundaries. The model is divided into e...
| Main Authors: | , , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
1988
|