A NEW MODEL FOR THE DIFFUSION OF ARSENIC IN POLYCRYSTALLINE SILICON
Experimental data are presented for the diffusion of arsenic in polycrystalline silicon (polysilicon) during a 15-min anneal at 900 °C. A new model is used to describe the data, which takes account of the different dopant diffusion rates in grains and in grain boundaries. The model is divided into e...
| Main Authors: | , , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
1988
|
| _version_ | 1826260940173082624 |
|---|---|
| author | Oneill, A Hill, C King, J Please, C |
| author_facet | Oneill, A Hill, C King, J Please, C |
| author_sort | Oneill, A |
| collection | OXFORD |
| description | Experimental data are presented for the diffusion of arsenic in polycrystalline silicon (polysilicon) during a 15-min anneal at 900 °C. A new model is used to describe the data, which takes account of the different dopant diffusion rates in grains and in grain boundaries. The model is divided into early and late stages and, in particular, the early stage model identifies grain growth as the major mechanism by which arsenic transfers from the grains to the grain boundaries. In the late stage model, grain growth can be ignored and analytic solutions for the arsenic concentration are derived. |
| first_indexed | 2024-03-06T19:13:43Z |
| format | Journal article |
| id | oxford-uuid:17a4c08d-e6a3-4ae9-9b94-817faf9a3bfb |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T19:13:43Z |
| publishDate | 1988 |
| record_format | dspace |
| spelling | oxford-uuid:17a4c08d-e6a3-4ae9-9b94-817faf9a3bfb2022-03-26T10:38:34ZA NEW MODEL FOR THE DIFFUSION OF ARSENIC IN POLYCRYSTALLINE SILICONJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:17a4c08d-e6a3-4ae9-9b94-817faf9a3bfbEnglishSymplectic Elements at Oxford1988Oneill, AHill, CKing, JPlease, CExperimental data are presented for the diffusion of arsenic in polycrystalline silicon (polysilicon) during a 15-min anneal at 900 °C. A new model is used to describe the data, which takes account of the different dopant diffusion rates in grains and in grain boundaries. The model is divided into early and late stages and, in particular, the early stage model identifies grain growth as the major mechanism by which arsenic transfers from the grains to the grain boundaries. In the late stage model, grain growth can be ignored and analytic solutions for the arsenic concentration are derived. |
| spellingShingle | Oneill, A Hill, C King, J Please, C A NEW MODEL FOR THE DIFFUSION OF ARSENIC IN POLYCRYSTALLINE SILICON |
| title | A NEW MODEL FOR THE DIFFUSION OF ARSENIC IN POLYCRYSTALLINE SILICON |
| title_full | A NEW MODEL FOR THE DIFFUSION OF ARSENIC IN POLYCRYSTALLINE SILICON |
| title_fullStr | A NEW MODEL FOR THE DIFFUSION OF ARSENIC IN POLYCRYSTALLINE SILICON |
| title_full_unstemmed | A NEW MODEL FOR THE DIFFUSION OF ARSENIC IN POLYCRYSTALLINE SILICON |
| title_short | A NEW MODEL FOR THE DIFFUSION OF ARSENIC IN POLYCRYSTALLINE SILICON |
| title_sort | new model for the diffusion of arsenic in polycrystalline silicon |
| work_keys_str_mv | AT oneilla anewmodelforthediffusionofarsenicinpolycrystallinesilicon AT hillc anewmodelforthediffusionofarsenicinpolycrystallinesilicon AT kingj anewmodelforthediffusionofarsenicinpolycrystallinesilicon AT pleasec anewmodelforthediffusionofarsenicinpolycrystallinesilicon AT oneilla newmodelforthediffusionofarsenicinpolycrystallinesilicon AT hillc newmodelforthediffusionofarsenicinpolycrystallinesilicon AT kingj newmodelforthediffusionofarsenicinpolycrystallinesilicon AT pleasec newmodelforthediffusionofarsenicinpolycrystallinesilicon |