Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires

Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires

We use polarization-resolved and temperature-dependent photoluminescence of single zincblende (ZB) (cubic) and wurtzite (WZ) (hexagonal) InP nanowires to probe differences in selection rules and bandgaps between these two semiconductor nanostructures. The WZ nanowires exhibit a bandgap 80 meV higher...

書誌詳細
主要な著者:	Mishra, A, Titova, L, Hoang, T, Jackson, H, Smith, L, Yarrison-Rice, J, Kim, Y, Joyce, H, Gao, Q, Tan, H, Jagadish, C
フォーマット:	Journal article
言語:	English
出版事項:	2007

類似資料

Carrier thermalization dynamics in single zincblende and wurtzite InP nanowires
著者:: Wang, Yuda, 等
出版事項: (2014)

A comparative study of transistors based on wurtzite and zincblende InAs nanowires
著者:: Williams, M, 等
出版事項: (2010)

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors
著者:: Ullah, A, 等
出版事項: (2013)

Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors
著者:: Ullah, A, 等
出版事項: (2013)

Quantum confinement of excitons in wurtzite InP nanowires
著者:: Pemasiri, K, 等
出版事項: (2015)

Temperature dependence of photoluminescence from single core-shell GaAs-AlGaAs nanowires
著者:: Titova, L, 等
出版事項: (2006)

Spatially-resolved photoluminescence imaging of CdS and GaAs/AlGaAs nanowires
著者:: Smith, L, 等
出版事項: (2007)

Dynamics of strongly degenerate electron-hole plasmas and excitons in single InP nanowires.
著者:: Titova, L, 等
出版事項: (2007)

Optical properties of single InP and GaAs nanowire heterostructures
著者:: Jackson, H, 等
出版事項: (2008)

Evolution of wurtzite structured GaAs shells around InAs nanowire cores
著者:: Paladugu, M, 等
出版事項: (2009)

Resonant excitation and imaging of nonequilibrium exciton spins in single core-shell GaAs-AlGaAs nanowires.
著者:: Hoang, T, 等
出版事項: (2007)

Phase perfection in zinc Blende and Wurtzite III-V nanowires using basic growth parameters.
著者:: Joyce, H, 等
出版事項: (2010)

Band Alignments of Ternary Wurtzite and Zincblende III-Nitrides Investigated by Hybrid Density Functional Theory
著者:: Yi-Chia Tsai, 等
出版事項: (2020-01-01)

Evolution of Wurtzite Structured GaAs Shells Around InAs Nanowire Cores
著者:: Kim Y, 等
出版事項: (2009-01-01)

Compound semiconductor nanowires for optoelectronic device applications
著者:: Gao, Q, 等
出版事項: (2011)

InP nanowires grown by SA-MOVPE
著者:: Gao, Q, 等
出版事項: (2012)

III-V compound semiconductor nanowires
著者:: Joyce, H, 等
出版事項: (2009)

Nanowires for optoelectronic device applications
著者:: Gao, Q, 等
出版事項: (2009)

Electronic properties of GaAs, InAs and InP nanowires studied by terahertz spectroscopy.
著者:: Joyce, H, 等
出版事項: (2013)

Unexpected benefits of rapid growth rate for III-V nanowires.
著者:: Joyce, H, 等
出版事項: (2009)

Rocksalt-Zincblende–Wurtzite Mixed-Phase ZnO Crystals With High Activity as Photocatalysts for Visible-Light-Driven Water Splitting
著者:: Titao Li, 等
出版事項: (2020-04-01)

III-V compound semiconductor nanowires for optoelectronic device applications
著者:: Gao, Q, 等
出版事項: (2011)

Epitaxy of III-V semiconductor nanowires towards optoelectronic devices
著者:: Gao, Q, 等
出版事項: (2009)

High Purity GaAs Nanowires Free of Planar Defects: Growth and Characterization
著者:: Joyce, H, 等
出版事項: (2008)

III-V semiconductor nanowires for optoelectronic device applications
著者:: Joyce, H, 等
出版事項: (2011)

Au-catalyzed InP nanowires: The influence of growth temperature and V/III ratio
著者:: Paiman, S, 等
出版事項: (2010)

III-V semiconductor nanowires for optoelectronic device applications
著者:: Joyce, H, 等
出版事項: (2011)

Direct observation of charge-carrier heating at WZ-ZB InP nanowire heterojunctions.
著者:: Yong, C, 等
出版事項: (2013)

Ultralow surface recombination velocity in InP nanowires probed by terahertz spectroscopy.
著者:: Joyce, H, 等
出版事項: (2012)

Nearly intrinsic exciton lifetimes in single twin-free GaAs/AlGaAs core-shell nanowire heterostructures
著者:: Perera, S, 等
出版事項: (2008)

Growth of InP nanowires on silicon using a thin buffer layer
著者:: Fonseka, H, 等
出版事項: (2012)

Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires
著者:: Paiman, S, 等
出版事項: (2010)

Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires.
著者:: Paiman, Suriati, 等
出版事項: (2010)

Novel growth and properties of GaAs nanowires on Si substrates.
著者:: Kang, J, 等
出版事項: (2010)

Defect-Free GaAs/AlGaAs Core-Shell Nanowires on Si Substrates
著者:: Kang, J, 等
出版事項: (2011)

Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates
著者:: Kang, J, 等
出版事項: (2010)

Effects of growth rate on InP nanowires morphology and crystal structure
著者:: Paiman, Suriati, 等
出版事項: (2013)

Wurtzite nanowires strain control by DC electrical stimulation
著者:: Giuseppe Prestopino, 等
出版事項: (2023-05-01)

Theoretical and Computational Analysis of a Wurtzite-AlGaN DUV-LED to Mitigate Quantum-Confined Stark Effect with a Zincblende Comparison Considering Mg- and Be-Doping
著者:: Horacio I. Solís-Cisneros, 等
出版事項: (2022-12-01)

Structural and optical characterization of vertical GaAs/GaP core-shell nanowires grown on Si substrates
著者:: Kang, J, 等
出版事項: (2010)