THE INTERACTION OF AZOMETHANE WITH SI(100)

THE INTERACTION OF AZOMETHANE WITH SI(100)

The adsorption of azomethane, and azomethane pre-cracked to form methyl and dinitrogen species, on Si(100) has been studied using XPS and thermal desorption techniques. Azomethane adsorbs with appreciable sticking probability at 300 K, most probably producing an adlayer containing a mixture of molec...

Полное описание

Библиографические подробности
Главные авторы:	Loh, K, Kingsley, C, Foord, J, Jackman, R
Формат:	Journal article
Язык:	English
Опубликовано:	Elsevier 1995

Схожие документы

THE INTERACTION OF WF6 WITH SI(100) - THERMAL AND PHOTON INDUCED REACTIONS
по: Jackman, R, и др.
Опубликовано: (1988)

THE INTERACTION OF ATOMIC-HYDROGEN WITH ADSORBED ETHYLENE AND ACETYLENE ON SI(100)
по: Chua, L, и др.
Опубликовано: (1994)

REACTION-MECHANISMS FOR THE PHOTON-ENHANCED ETCHING OF SEMICONDUCTORS - AN INVESTIGATION OF THE UV-STIMULATED INTERACTION OF CHLORINE WITH SI(100)
по: Jackman, R, и др.
Опубликовано: (1986)

PRODUCT YIELDS AND MECHANISM OF THE EXCIMER LASER PHOTOLYSIS OF AZOMETHANE AT 193 NM
по: Baggott, J, и др.
Опубликовано: (1987)

STUDIES OF ADSORPTION AND ELECTRON-INDUCED DISSOCIATION OF FE(CO)5 ON SI(100)
по: Foord, J, и др.
Опубликовано: (1986)

THERMAL AND PHOTOCHEMICAL VAPOR-DEPOSITION OF FE FROM FE(CO)5 ON SI(100)
по: Jackman, R, и др.
Опубликовано: (1989)

ELECTRON-BEAM STIMULATED CHEMICAL VAPOR-DEPOSITION OF PATTERNED TUNGSTEN FILMS ON SI(100)
по: Jackman, R, и др.
Опубликовано: (1986)

SURFACE SPECTROSCOPIC STUDIES OF THE INITIAL-STAGES OF DIAMOND GROWTH ON SI(100)
по: Jackman, R, и др.
Опубликовано: (1993)

ADSORPTION, ETCHING AND PHOTOINDUCED REACTIONS AT THE SI(100)-CCL4 INTERFACE
по: French, C, и др.
Опубликовано: (1989)

Adsorption, etching and photo-induced reactions at the Si(100)-CCl 4 interface
по: French, C, и др.
Опубликовано: (1989)

Surface spectroscopic and molecular beam studies of the reactions of trimethylaluminium on Si(100)
по: Wee, A, и др.
Опубликовано: (1989)

SURFACE SPECTROSCOPIC AND MOLECULAR-BEAM STUDIES OF THE REACTIONS OF TRIMETHYLALUMINUM ON SI(100)
по: Wee, A, и др.
Опубликовано: (1989)

THE INITIAL-STAGES OF DIAMOND GROWTH - AN ADSORPTION STUDY OF HOT-FILAMENT ACTIVATED METHANE AND HYDROGEN ON SI(100)
по: Jackman, R, и др.
Опубликовано: (1993)

Ecological and dynamic analysis of gut microbiota in the early stage of azomethane-dextran sodium sulfate model in mice
по: Ruizheng Sun, и др.
Опубликовано: (2023-04-01)

Surface studies of the interaction of Cl2 with InP(100)(4 × 2); an investigation of adsorption, thermal etching and ion beam assisted processes
по: Murrell, A, и др.
Опубликовано: (1990)

SURFACE STUDIES OF THE INTERACTION OF CL-2 WITH INP(100)(4X2) - AN INVESTIGATION OF ADSORPTION, THERMAL ETCHING AND ION-BEAM ASSISTED PROCESSES
по: Murrell, A, и др.
Опубликовано: (1990)

Effect of Lactobacillus fermentum ZS40 on the NF-κB signaling pathway in an azomethane-dextran sulfate sodium-induced colon cancer mouse model
по: Jia Liu, и др.
Опубликовано: (2022-09-01)

Surface studies of the reactivity of methyl, acetylene and atomic hydrogen at CVD diamond surfaces
по: Foord, J, и др.
Опубликовано: (1998)

Reactive chemistry of C(2)H(x) species on CVD diamond
по: Loh, K, и др.
Опубликовано: (1998)

Diamond growth chemistry: Its observation using real time in situ molecular beam scattering techniques
по: Loh, K, и др.
Опубликовано: (1997)

CHEMICAL PRECURSORS FOR GAAS ETCHING WITH LOW-ENERGY ION-BEAMS - CHLORINE ADSORPTION ON GAAS(100)
по: Jackman, R, и др.
Опубликовано: (1991)

A COMPARATIVE-STUDY OF THE ADSORPTION OF HOT-FILAMENT ACTIVATED HYDROCARBONS ON SILICON, GALLIUM-ARSENIDE AND CVD DIAMOND
по: Chua, L, и др.
Опубликовано: (1994)

Dopant incorporation mechanisms during the growth of thin film diamond
по: Jackman, R, и др.
Опубликовано: (1996)

The interaction of xenon difluoride with Si(100)
по: Holt, Judson Robert, 1974-
Опубликовано: (2005)

Tuning the electron affinity of CVD diamond with adsorbed caesium and oxygen layers
по: Loh, K, и др.
Опубликовано: (1997)

DEVELOPMENT OF CHEMICAL BEAM EPITAXY FOR THE DEPOSITION OF GALLIUM NITRIDE
по: Kingsley, C, и др.
Опубликовано: (1995)

Growth studies of thin film diamond using molecular beam techniques
по: Loh, K, и др.
Опубликовано: (1996)

Interaction of organo-sulfur compounds with CVD diamond surfaces
по: Baral, B, и др.
Опубликовано: (2000)

Interactions of Kr(F₂), O₂, and (O₂)₂ with Si(100)
по: Sathitwitayakul, Thanasak.
Опубликовано: (2021)

Growth and mechanistic studies of diamond formation by chemical beam epitaxy using methyl and acetylene precursors
по: Foord, J, и др.
Опубликовано: (1996)

Photoelectron spectroscopy studies of barium films on diamond with respect to the modification of negative electron affinity characteristics
по: Jones, F, и др.
Опубликовано: (1998)

METAL DEPOSITION ON SILICON: IN SITU SURFACE STUDIES.
по: Jackman, R, и др.
Опубликовано: (1984)

APPLICATIONS OF SURFACE SENSITIVE TECHNIQUES IN THE STUDY OF PHOTOCHEMICAL PROCESSING AT THE SOLID-GAS INTERFACE.
по: Jackman, R, и др.
Опубликовано: (1986)

CHEMICAL VAPOR-DEPOSITION ON SILICON - INSITU SURFACE STUDIES
по: Foord, J, и др.
Опубликовано: (1984)

SURFACE-SCIENCE INVESTIGATIONS OF THE METALLIZATION OF SEMICONDUCTORS BY PHOTOCHEMICAL DEPOSITION AND RELATED TECHNIQUES
по: Foord, J, и др.
Опубликовано: (1986)

Interactions between PTCDI-C8 and Si(100) Surface
по: Katarzyna Lament, и др.
Опубликовано: (2023-03-01)

Atom abstraction in the interaction of F₂ and XeF₂ with Si(100)
по: Gosalvez-Blanco, David, 1968-
Опубликовано: (2008)

INTERACTION OF HYDROGEN WITH CHEMICAL-VAPOR-DEPOSITION DIAMOND SURFACES - A THERMAL-DESORPTION STUDY
по: Chua, L, и др.
Опубликовано: (1994)

INVESTIGATIONS OF THE THERMAL-REACTIONS OF CHLORINE ON THE GAAS(100) SURFACE
по: French, C, и др.
Опубликовано: (1991)

THERMAL-DECOMPOSITION OF TRIETHYLGALLIUM ON GAAS(100) IN THE PRESENCE OF AL AND IN
по: Fitzgerald, E, и др.
Опубликовано: (1992)