Photoconductivity studies of InAsP/InP heterostructures in applied magnetic and electric fields

Photoconductivity studies of InAsP/InP heterostructures in applied magnetic and electric fields

Bibliografische gegevens
Hoofdauteurs:	Kinder, D, Nicholas, R, Stavrinou, P, Haywood, S, Hart, L, Hopkinson, M, David, J, Hill, G
Formaat:	Journal article
Gepubliceerd in:	1996

Gelijkaardige items

Nanowire Triple-Junction GaInP/InP/InAsP Solar Cells Realized
door: Wallenberg Reine, et al.
Gepubliceerd in: (2024-01-01)

Materials properties and dislocation dynamics in InAsP compositionally graded buffers on InP substrates
door: Jandl, Adam Christopher, et al.
Gepubliceerd in: (2014)

Submicron-Size Emitters of the 1.2–1.55 μm Spectral Range Based on InP/InAsP/InP Nanostructures Integrated into Si Substrate
door: Ivan Melnichenko, et al.
Gepubliceerd in: (2022-11-01)

Influence of TOPO and TOPO-CdSe/ZnS Quantum Dots on Luminescence Photodynamics of InP/InAsP/InPHeterostructure Nanowires
door: Artem I. Khrebtov, et al.
Gepubliceerd in: (2021-03-01)

Terahertz photoconductivity of mobile electrons in nanoporous InP honeycombs
door: Lloyd-Hughes, J, et al.
Gepubliceerd in: (2008)

DOUBLE SOURCE PHOTOCONDUCTIVITY OF INP-FE
door: Fung, S, et al.
Gepubliceerd in: (1985)

Continuous-wave operation and 10-Gb/s direct modulation of InAsP/InP sub-wavelength nanowire laser on silicon photonic crystal
door: Masato Takiguchi, et al.
Gepubliceerd in: (2017-04-01)

Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors
door: Peng, K, et al.
Gepubliceerd in: (2016)

CHROMIUM CONTAMINATION IN VPE INP FROM PHOTOCONDUCTIVITY SPECTRA
door: Fung, S, et al.
Gepubliceerd in: (1981)

Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches
door: Lloyd-Hughes, J, et al.
Gepubliceerd in: (2005)

Growing epitaxial layers of InP/InGaAsP heterostructures on the profiled InP surfaces by liquid-phase epitaxy
door: Mikhail G. Vasil’ev, et al.
Gepubliceerd in: (2021-06-01)

Optical properties of single InP and GaAs nanowire heterostructures
door: Jackson, H, et al.
Gepubliceerd in: (2008)

Characteristics of Bow-Tie Antenna Structures for Semi-Insulating GaAs and InP Photoconductive Terahertz Emitters
door: Salman Alfihed, et al.
Gepubliceerd in: (2021-04-01)

The physics and technology of the InAlAs/n⁺-InP heterostructure field-effect transistor
door: Greenberg, David Ross
Gepubliceerd in: (2007)

Technological features of the method of liquid-phase epitaxy when growing InP/GaInAsP heterostructures
door: Mikhail G. Vasil’ev, et al.
Gepubliceerd in: (2021-09-01)

Surface roughness anisotopy on mismatched InAlAs/InGaAs/InP heterostructures
door: Sinn, Matthew T. (Matthew Thomas)
Gepubliceerd in: (2005)

Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure
door: Liang Zhao, et al.
Gepubliceerd in: (2017-05-01)

Improvement the Efficiency of CIGS Thin Film Solar Cells by Changing the Doping of the Absorbent Layer and Adding the InAsP Layer
door: H. Firoozi, et al.
Gepubliceerd in: (2017-12-01)

Engineering the Side Facets of Vertical [100] Oriented InP Nanowires for Novel Radial Heterostructures
door: H. Aruni Fonseka, et al.
Gepubliceerd in: (2019-12-01)

The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures
door: Xiaohong Zhao, et al.
Gepubliceerd in: (2019-08-01)

Ultraviolet photoconduction in tungsten disulphide based Schottky heterostructure photodetector
door: Ahmad, Harith, et al.
Gepubliceerd in: (2019)

Tunable photoconductive devices based on graphene/WSe2 heterostructures
door: Tang Hongyu, et al.
Gepubliceerd in: (2022-01-01)

Optical fibre-based single photon source using InAsP quantum dot nanowires and gradient-index lens collection
door: David B. Northeast, et al.
Gepubliceerd in: (2021-11-01)

The influence of the physicochemical nature of the components of the V2O5/GaAs, MnO2/GaAs, V2O5/InP, MnO2/InP, TiO2/InP, and SnO2/InP heterostructures and the oxidation conditions on the surface morphology of the synthesised films
door: Anastasia S. Kovaleva, et al.
Gepubliceerd in: (2022-03-01)

Characterization of InGaAlAs/InAlAs/InP heterostructures grown by molecular beam epitaxy
door: Zhang, Weimin
Gepubliceerd in: (2008)

Characteristics of InAlAs/InGaAs heterostructures grown on InP substrates by molecular beam epitaxy
door: Miao, Yubo.
Gepubliceerd in: (2009)

InP and InGaAs grown on InP substrate by molecular beam epitaxy
door: Yu Hailong, et al.
Gepubliceerd in: (2022-01-01)

Enhanced Properties of Extended Wavelength InGaAs on Compositionally Undulating Step-Graded InAsP Buffers Grown by Molecular Beam Epitaxy
door: Xuefei Li, et al.
Gepubliceerd in: (2021-12-01)

CYCLOTRON-RESONANCE MEASUREMENTS ON P-TYPE STRAINED-LAYER SI1-XGEX/SI HETEROSTRUCTURES
door: Wong, S, et al.
Gepubliceerd in: (1995)

Properties of double p+-InP/n-InGaAsP/n-InP heterojunctions obtained by LPE method
door: Vakiv N. M., et al.
Gepubliceerd in: (2012-04-01)

Electronic transport mechanism and defect states for p-InP/i-InGaAs/n-InP photodiodes
door: Thi Kim Oanh Vu, et al.
Gepubliceerd in: (2022-07-01)

Optimization of InGaAs(P) photovoltaic cells lattice matched to InP
door: Emziane, M, et al.
Gepubliceerd in: (2007)

The electrical and optical characterization of the InGaAs/InP alloy system
door: Towe, Elias D
Gepubliceerd in: (2005)

Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001)
door: Silu Yan, et al.
Gepubliceerd in: (2022-03-01)

Hydrogen degradation on InP HEMTs
door: Blanchard, Roxann Russell
Gepubliceerd in: (2013)

High-quality InP on GaAs
door: Quitoriano, Nathaniel Joseph
Gepubliceerd in: (2007)

Electrically induced Bragg Reflectors in InP/InGaAsP waveguides as ultrafast optoelectronic modulators
door: De Laurentis Martina, et al.
Gepubliceerd in: (2008-01-01)

Fabrication and magnetic properties of granular Co/porous InP nanocomposite materials
door: Ma Li, et al.
Gepubliceerd in: (2011-01-01)

PERSISTENT PHOTOCONDUCTIVITY IN GA0.49IN0.51P/GAAS HETEROJUNCTIONS
door: Benamor, S, et al.
Gepubliceerd in: (1989)

Improvement of Power and Efficiency of High-Mesa Semi-Insulating InP: Fe Buried Heterostructure Lasers with Wide Bandgap Layers
door: Chen Lyu, et al.
Gepubliceerd in: (2023-09-01)