QUANTITATIVE EBIC INVESTIGATIONS OF DEFORMATION-INDUCED AND COPPER DECORATED DISLOCATIONS IN SILICON
Deformation induced dislocations in silicon have been found to exhibit different degrees of electrical activity dependent upon whether they were deformed at 420°C or 650°C. Furthermore the effects of copper decoration are also found to vary between dislocations produced at these temperatures. Quanti...
| Những tác giả chính: | , |
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| Định dạng: | Journal article |
| Ngôn ngữ: | English |
| Được phát hành: |
Publ by Inst of Physics Publ Ltd
1991
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