Skip to content
VuFind
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文（繁體）
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
Հայերէն
Українська
Sámegiella
Монгол
Language
All Fields
Title
Author
Subject
Call Number
ISBN/ISSN
Tag
Find
Advanced
INTER-BAND MAGNETOABSORPTION I...
Cite this
Text this
Email this
Print
Export Record
Export to RefWorks
Export to EndNoteWeb
Export to EndNote
Permanent link
INTER-BAND MAGNETOABSORPTION IN A GA0.47IN0.53AS-AL0.48IN0.52AS QUANTUM-WELL
Bibliographic Details
Main Authors:
Rogers, D
,
Nicholas, R
,
Amor, S
,
Portal, J
,
Cho, A
,
Sivco, D
Format:
Journal article
Published:
1986
Holdings
Description
Similar Items
Staff View
Similar Items
Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors
by: Hyeon-Bhin Jo, et al.
Published: (2018-07-01)
Optimization and temperature dependence characteristics of low temperature In0.3Ga0.7As and In0.53Ga0.47As-In0.52Al0.48As semiconductor terahertz photoconductors
by: I. Kostakis, et al.
Published: (2013-09-01)
Correlation between Optical Localization-State and Electrical Deep-Level State in In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As Quantum Well Structure
by: Il-Ho Ahn, et al.
Published: (2021-02-01)
SHALLOW DONOR SPECTROSCOPY AND POLARON COUPLING IN GA0.47IN0.53AS
by: Nicholas, R, et al.
Published: (1985)
FREQUENCY-SHIFTED POLARON COUPLING IN GA0.47IN0.53AS HETEROJUNCTIONS
by: Nicholas, R, et al.
Published: (1985)