The effect of oxide precipitates on minority carrier lifetime in p-type silicon
Transient and quasi-steady-state photoconductance methods were used to measure minority carrier lifetime in ∼10 cm p-type Czochralski silicon processed in very clean conditions to contain oxide precipitates. The nucleation and growth times for precipitation were varied to produce 35 samples, which w...
| Main Authors: | , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2011
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