Dislocation locking by nitrogen impurities in FZ-silicon
The locking of dislocations by nitrogen impurities in nitrogen-doped FZ-grown (NFZ) silicon crystals was investigated as a function of time in the temperature range 550-830degreesC. It was found that nitrogen impurities induce a strong locking effect on stationary dislocations after a sufficiently l...
| Main Authors: | , , , |
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| Format: | Conference item |
| Published: |
2003
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