Skip to content
VuFind
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文(繁體)
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
Հայերէն
Українська
Sámegiella
Монгол
Language
All Fields
Title
Author
Subject
Call Number
ISBN/ISSN
Tag
Find
Advanced
Effects of interdiffusion on t...
Cite this
Text this
Email this
Print
Export Record
Export to RefWorks
Export to EndNoteWeb
Export to EndNote
Permanent link
Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots
Bibliographic Details
Main Authors:
Leon, R
,
Kim, Y
,
Jagadish, C
,
Gal, M
,
Zou, J
,
Cockayne, D
Format:
Journal article
Published:
1996
Holdings
Description
Similar Items
Staff View
Similar Items
Adatom condensation and quantum dot sizes in InGaAs/GaAs (001)
by: Leon, R, et al.
Published: (2000)
Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells
by: Yuan, S, et al.
Published: (1998)
Island shape instabilities and surfactant-like effects in the growth of InGaAs/GaAs quantum dots
by: Leon, R, et al.
Published: (1999)
Novel impurity-free interdiffusion in GaAs/AlGaAs quantum wells by anodization and rapid thermal annealing
by: Yuan, S, et al.
Published: (1997)
On-zone axis electron diffraction contrast study of the size of InGaAs/GaAs quantum dots
by: Liao, X, et al.
Published: (1998)