The influence of Bi doping on the in situ growth of TlBa2Ca2Cu3O9 high-T-c films
The in situ process-laser ablation in combination with thermal evaporation of Tl2O-has turned out to be a preparation method for single-phase and epitaxial TlBa2Ca2Cu3O9 (1223) thin films with T-c values up to 109 K. It was found by several groups that a partial substitution of T1 by Bi simplifies t...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Conference item |
| Published: |
1998
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