Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates.
Vertically oriented GaAs nanowires (NWs) are grown on Si(111) substrates using metal-organic chemical vapor deposition. Controlled epitaxial growth along the <111> direction is demonstrated following the deposition of thin GaAs buffer layers and the elimination of structural defects, s...
| المؤلفون الرئيسيون: | , , , , , , , , , |
|---|---|
| التنسيق: | Journal article |
| اللغة: | English |
| منشور في: |
2012
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