Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates.
Vertically oriented GaAs nanowires (NWs) are grown on Si(111) substrates using metal-organic chemical vapor deposition. Controlled epitaxial growth along the <111> direction is demonstrated following the deposition of thin GaAs buffer layers and the elimination of structural defects, s...
| Những tác giả chính: | , , , , , , , , , |
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| Định dạng: | Journal article |
| Ngôn ngữ: | English |
| Được phát hành: |
2012
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