The development of semi-insulating silicon substrates for microwave devices
The concept of fully encapsulated, semi-insulating silicon (SI-Si) Cz-SOI substrates for silicon microwave devices is presented. Results show that, using gold as a compensating impurity, a silicon resistivity of 180kΩcm can be achieved. Sufficiently high resistivity substrates for microwave applicat...
| Main Authors: | , , , |
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| Format: | Conference item |
| Published: |
2008
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