Ion damage buildup and amorphization processes in GaAs-AlxGa1-xAs multilayers

Ion damage buildup and amorphization processes in GaAs-AlxGa1-xAs multilayers

Manylion Llyfryddiaeth
Prif Awduron:	Tan, H, Jagadish, C, Williams, J, Zou, J, Cockayne, D
Fformat:	Journal article
Cyhoeddwyd:	1996

Eitemau Tebyg

ION DAMAGE BUILDUP AND AMORPHIZATION PROCESSES IN ALXGA1-XAS
gan: Tan, H, et al.
Cyhoeddwyd: (1995)

Current Density of AlxGa1-xAs/GaAs Superlattice
gan: Ahmed Z. Obaid, et al.
Cyhoeddwyd: (2024-09-01)

Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots
gan: Y. C. Chang, et al.
Cyhoeddwyd: (2015-06-01)

Improvement of minority carrier lifetime in GaAs/AlxGa 1-xAs core-shell nanowires
gan: Jiang, N, et al.
Cyhoeddwyd: (2012)

SIMULATION OF SOLAR CELLS BASED ON HETEROSTRUCTURES AlxGa1-xAs - InxGa1-xAs - GaAs
gan: Oleg V. Devitsky, et al.
Cyhoeddwyd: (2022-05-01)

Long minority carrier lifetime in Au-catalyzed GaAs/AlxGa1-xAs core-shell nanowires
gan: Jiang, N, et al.
Cyhoeddwyd: (2012)

Piezoelectric effects of single-crystal GaAs and multi-layered AlxGa1-xAs/GaAs material measured by the Michelson interferometer
gan: Patara Aiyarak, et al.
Cyhoeddwyd: (2003-09-01)

Topographical, compositional, and dopant contrast from cleavage surfaces of GaAs-AlxGa1-xAs superlattices
gan: Castell, M, et al.
Cyhoeddwyd: (1995)

Picosecond photoluminescence intensity correlation measurements of hot carriers in GaAs/AlxGa1-xAs quantum wells
gan: de Paula, A, et al.
Cyhoeddwyd: (1994)

Energy shifts of heavy and light holes and electroluminescence intensity increase in p-AlxGa1-xAs/GaAs1-yPy/n-AlxGa1-xAs laser diode heterostructure under uniaxial compression
gan: Bogdanov, E., et al.
Cyhoeddwyd: (2011-02-01)

Formation Technology of Graded-Gap AlxGa1-xAs Solar Cell Structure Separated from GaAs Substrate
gan: Aldis ŠILĖNAS, et al.
Cyhoeddwyd: (2014-06-01)

Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt
gan: Olga Khvostikova, et al.
Cyhoeddwyd: (2024-01-01)

Propriedades elétricas da liga AlxGa1-xAs dopada com Silício.
gan: Ivan Frederico Lupiano Dias, et al.
Cyhoeddwyd: (2004-12-01)

Growth and Characterization of AlxGa1-xAs Obtained by Metallic-Arsenic-Based-MOCVD
gan: Roberto Saúl Castillo-Ojeda, et al.
Cyhoeddwyd: (2017-03-01)

Far Infrared Modulated Photoluminescence (FIRM-PL) study of a 2-D electron gas in GaAs/AlxGa1-xAs heterojunctions and quantum wells
gan: Nicholas, R, et al.
Cyhoeddwyd: (2000)

Effects of hills, morphology, electromagnetic fields, temperature, pressure, and aluminum concentration on the second harmonic generation of GaAs/AlxGa1-xAs elliptical quantum rings
gan: N. Benzerroug, et al.
Cyhoeddwyd: (2024-08-01)

Etude analytique d’une cellule solaire à hétérojonction p+ (GaAs)/n (AlxGa1-xAs)/N (Al0.4Ga0.6As)
gan: H. Ben Slimane, et al.
Cyhoeddwyd: (2008-06-01)

Numerical study of valence band states evolution in AlxGa1-xAs [111] QDs systems
gan: Mikhail Lazarev
Cyhoeddwyd: (2024-02-01)

A far infrared modulated photoluminescence (FIRM-PL) study of cyclotron resonance in a 2D electron gas in GaAs/AlxGa1-xAs heterojunctions
gan: Chang, C, et al.
Cyhoeddwyd: (1999)

Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots
gan: Liao, X, et al.
Cyhoeddwyd: (1999)

Research of synthesis conditions and structural features of heterostructure AlXGa1-XAs/GaAs of the “desert rose” type
gan: Yana Suchikova, et al.
Cyhoeddwyd: (2022-12-01)

Transmission electron microscopy study of InxGa1-xAs quantum dots on a GaAs(001) substrate
gan: Zou, J, et al.
Cyhoeddwyd: (1999)

Transmission-electron microscopy study of the shape of buried InxGa1-xAs/GaAs quantum dots
gan: Liao, X, et al.
Cyhoeddwyd: (1998)

INFLUENCE OF LIGHT ON THE CONFINEMENT POTENTIAL OF GAAS/ALXGA1-XAS HETEROJUNCTIONS
gan: Michels, J, et al.
Cyhoeddwyd: (1995)

Observation of magnetophotoluminescence from a GaN/AlxGa1-xN heterojunction
gan: Shields, P, et al.
Cyhoeddwyd: (2002)

The electrical characteristic of AlxGa1-xSb thin films /
gan: 451516 Law, Tien Shyang, et al.
Cyhoeddwyd: (2010)

Carrier capture and relaxation in Stranski-Krastanow InxGa1-xAs/GaAs(311)B quantum dots
gan: Lobo, C, et al.
Cyhoeddwyd: (2000)

Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots (vol 82, pg 5148, 1999)
gan: Liao, X, et al.
Cyhoeddwyd: (1999)

Inhomogeneous sources of misfit dislocation generation in InxGa1-xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy
gan: Zou, J, et al.
Cyhoeddwyd: (1997)

ELECTRON-LO-PHONON SCATTERING RATES IN GAAS-ALXGA1-XAS QUANTUM-WELLS
gan: Weber, G, et al.
Cyhoeddwyd: (1991)

Critical parameters for the presence of a 2DEG in GaN/AlxGa1−xN heterostructures
gan: T. Scheinert, et al.
Cyhoeddwyd: (2019-12-01)

Effect of oxygen on the crystallinity and defect state of AlxGa1−xN epilayers
gan: Chang Wan Ahn, et al.
Cyhoeddwyd: (2023-01-01)

Optical properties of GaAs/Al_xGa_{1-x}As/GaAs quantum dot with off-central impurity driven by electric field
gan: V.A. Holovatsky, et al.
Cyhoeddwyd: (2018-03-01)

Magnetophotoluminescence of GaN/AlxGa1-xN quantum wells: Valence band reordering and excitonic binding energies
gan: Shields, P, et al.
Cyhoeddwyd: (2001)

TEM study of compositional profile in AlGaAs/GaAs quantum wells
gan: Zou, J, et al.
Cyhoeddwyd: (1998)

Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots
gan: Leon, R, et al.
Cyhoeddwyd: (1996)

MAGNETOOPTICAL STUDIES OF SCREENED EXCITONS IN GAAS/ALXGA1-XAS MODULATION-DOPED QUANTUM-WELLS
gan: Henriques, A, et al.
Cyhoeddwyd: (1992)

BULK AND TRANSFER DOPING EFFECTS IN ALXGA1-XAS LAYERS GROWN ON SEMI-INSULATING GAAS SUBSTRATES
gan: Nicholas, R, et al.
Cyhoeddwyd: (1984)

Physics-based modeling and characterization of low frequency noise behavior for AlxGa1−xN/GaN HEMT
gan: Jing Cai, et al.
Cyhoeddwyd: (2024-03-01)

Improving GaP Solar Cell Performance by Passivating the Surface Using AlxGa1-xP Epi-Layer
gan: Xuesong Lu, et al.
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