Ion damage buildup and amorphization processes in GaAs-AlxGa1-xAs multilayers

Ion damage buildup and amorphization processes in GaAs-AlxGa1-xAs multilayers

Bibliografiske detaljer
Main Authors:	Tan, H, Jagadish, C, Williams, J, Zou, J, Cockayne, D
Format:	Journal article
Udgivet:	1996

Lignende værker

ION DAMAGE BUILDUP AND AMORPHIZATION PROCESSES IN ALXGA1-XAS
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Propriedades elétricas da liga AlxGa1-xAs dopada com Silício.
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Numerical study of valence band states evolution in AlxGa1-xAs [111] QDs systems
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Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots
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Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots (vol 82, pg 5148, 1999)
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Inhomogeneous sources of misfit dislocation generation in InxGa1-xAs/GaAs strained-layer heterostructures grown by molecular beam epitaxy
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ELECTRON-LO-PHONON SCATTERING RATES IN GAAS-ALXGA1-XAS QUANTUM-WELLS
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Optical properties of GaAs/Al_xGa_{1-x}As/GaAs quantum dot with off-central impurity driven by electric field
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TEM study of compositional profile in AlGaAs/GaAs quantum wells
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Effects of interdiffusion on the luminescence of InGaAs/GaAs quantum dots
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MAGNETOOPTICAL STUDIES OF SCREENED EXCITONS IN GAAS/ALXGA1-XAS MODULATION-DOPED QUANTUM-WELLS
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