Improving dopant incorporation during femtosecond-laser doping of Si with a Se thin-film dopant precursor
We study the dopant incorporation processes during thin-film fs-laser doping of Si and tailor the dopant distribution through optimization of the fs-laser irradiation conditions. Scanning electron microscopy, transmission electron microscopy, and profilometry are used to study the interrelated dopan...
| Main Authors: | , , , , , |
|---|---|
| Format: | Journal article |
| Jezik: | English |
| Izdano: |
Springer
2013
|