Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN

Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN

Taispeáin leaganacha eile (2)

The effects of oxygen plasma treatment prior to metal contact deposition have been studied for both n-and p-GaN, as well as n-AlGaN. In n-GaN, the as-deposited Ti/Al contacts change from rectifying to ohmic, and further improvements are observed after rapid thermal annealing (RTA). A specific contac...

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Príomhchruthaitheoirí:	Yan, J, Kappers, M, Crossley, A, McAleese, C, Phillips, W, Humphreys, C
Formáid:	Journal article
Teanga:	English
Foilsithe / Cruthaithe:	2004

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