Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN

The effects of oxygen plasma treatment prior to metal contact deposition have been studied for both n-and p-GaN, as well as n-AlGaN. In n-GaN, the as-deposited Ti/Al contacts change from rectifying to ohmic, and further improvements are observed after rapid thermal annealing (RTA). A specific contac...

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Main Authors:	Yan, J, Kappers, M, Crossley, A, McAleese, C, Phillips, W, Humphreys, C
格式:	Journal article
語言:	English
出版:	2004

Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN 由 Yan, J, Kappers, M, Crossley, A, McAleese, C, Phillips, W, Humphreys, C

出版 2004

Conference item

Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN 由 Yan, J, Kappers, M, Crossley, A, McAleese, C, Phillips, W, Humphreys, C

出版 2004

Journal article

Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN

Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN 由 Yan, J, Kappers, M, Crossley, A, McAleese, C, Phillips, W, Humphreys, C

Effects of oxygen plasma treatment on the formation of ohmic contacts to GaN and AlGaN 由 Yan, J, Kappers, M, Crossley, A, McAleese, C, Phillips, W, Humphreys, C

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