Optoelectronic properties of ultrathin ALD silicon nitride and its potential as a hole-selective nanolayer for high efficiency solar cells
<p>Fully exploiting the power conversion efficiency limit of silicon solar cells requires the use of passivating contacts that minimize electrical losses at metal/silicon interfaces. An efficient hole-selective passivating contact remains one of the key challenges for this technology to be dep...
| Huvudupphovsmän: | , , , , , , |
|---|---|
| Materialtyp: | Journal article |
| Språk: | English |
| Publicerad: |
AIP Publishing
2020
|