Optoelectronic properties of ultrathin ALD silicon nitride and its potential as a hole-selective nanolayer for high efficiency solar cells
<p>Fully exploiting the power conversion efficiency limit of silicon solar cells requires the use of passivating contacts that minimize electrical losses at metal/silicon interfaces. An efficient hole-selective passivating contact remains one of the key challenges for this technology to be dep...
| Main Authors: | , , , , , , |
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| Format: | Journal article |
| Language: | English |
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AIP Publishing
2020
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| _version_ | 1797058838500737024 |
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| author | Khorani, E McNab, S Scheul, TE Rahman, T Bonilla, RS Boden, SA Wilshaw, PR |
| author_facet | Khorani, E McNab, S Scheul, TE Rahman, T Bonilla, RS Boden, SA Wilshaw, PR |
| author_sort | Khorani, E |
| collection | OXFORD |
| description | <p>Fully exploiting the power conversion efficiency limit of silicon solar cells requires the use of passivating contacts that minimize electrical losses at metal/silicon interfaces. An efficient hole-selective passivating contact remains one of the key challenges for this technology to be deployed industrially and to pave the way for adoption in tandem configurations. Here, we report the first account of silicon nitride (SiN<sub>x</sub>) nanolayers with electronic properties suitable for effective hole-selective contacts. We use x-ray photoemission methods to investigate ultra-thin SiN<sub>x</sub> grown via atomic layer deposition, and we find that the band alignment determined at the SiN<sub>x</sub>/Si interface favors hole transport. A band offset ratio, ΔE<sub>C</sub>/ΔE<sub>V</sub>, of 1.62 ± 0.24 is found at the SiN<sub>x</sub>/Si interface for the as-grown films. This equates to a 500-fold increase in tunneling selectivity for holes over electrons, for a film thickness of 3 nm. However, the thickness of such films increases by 2 Å–5 Å within 48 h in cleanroom conditions, which leads to a reduction in hole-selectivity. X-ray photoelectron spectroscopy depth profiling has shown this film growth to be linked to oxidation, and furthermore, it alters the ΔE<sub>C</sub>/ΔE<sub>V</sub> ratio to 1.22 ± 0.18. The SiN<sub>x</sub>/Si interface band alignment makes SiN<sub>x</sub> nanolayers a promising architecture to achieve widely sought hole-selective passivating contacts for high efficiency silicon solar cells.</p> |
| first_indexed | 2024-03-06T19:56:01Z |
| format | Journal article |
| id | oxford-uuid:259f4d32-4e07-4aa4-ad78-8dbb37d93977 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T19:56:01Z |
| publishDate | 2020 |
| publisher | AIP Publishing |
| record_format | dspace |
| spelling | oxford-uuid:259f4d32-4e07-4aa4-ad78-8dbb37d939772022-03-26T11:56:35ZOptoelectronic properties of ultrathin ALD silicon nitride and its potential as a hole-selective nanolayer for high efficiency solar cellsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:259f4d32-4e07-4aa4-ad78-8dbb37d93977EnglishSymplectic ElementsAIP Publishing2020Khorani, EMcNab, SScheul, TERahman, TBonilla, RSBoden, SAWilshaw, PR<p>Fully exploiting the power conversion efficiency limit of silicon solar cells requires the use of passivating contacts that minimize electrical losses at metal/silicon interfaces. An efficient hole-selective passivating contact remains one of the key challenges for this technology to be deployed industrially and to pave the way for adoption in tandem configurations. Here, we report the first account of silicon nitride (SiN<sub>x</sub>) nanolayers with electronic properties suitable for effective hole-selective contacts. We use x-ray photoemission methods to investigate ultra-thin SiN<sub>x</sub> grown via atomic layer deposition, and we find that the band alignment determined at the SiN<sub>x</sub>/Si interface favors hole transport. A band offset ratio, ΔE<sub>C</sub>/ΔE<sub>V</sub>, of 1.62 ± 0.24 is found at the SiN<sub>x</sub>/Si interface for the as-grown films. This equates to a 500-fold increase in tunneling selectivity for holes over electrons, for a film thickness of 3 nm. However, the thickness of such films increases by 2 Å–5 Å within 48 h in cleanroom conditions, which leads to a reduction in hole-selectivity. X-ray photoelectron spectroscopy depth profiling has shown this film growth to be linked to oxidation, and furthermore, it alters the ΔE<sub>C</sub>/ΔE<sub>V</sub> ratio to 1.22 ± 0.18. The SiN<sub>x</sub>/Si interface band alignment makes SiN<sub>x</sub> nanolayers a promising architecture to achieve widely sought hole-selective passivating contacts for high efficiency silicon solar cells.</p> |
| spellingShingle | Khorani, E McNab, S Scheul, TE Rahman, T Bonilla, RS Boden, SA Wilshaw, PR Optoelectronic properties of ultrathin ALD silicon nitride and its potential as a hole-selective nanolayer for high efficiency solar cells |
| title | Optoelectronic properties of ultrathin ALD silicon nitride and its potential as a hole-selective nanolayer for high efficiency solar cells |
| title_full | Optoelectronic properties of ultrathin ALD silicon nitride and its potential as a hole-selective nanolayer for high efficiency solar cells |
| title_fullStr | Optoelectronic properties of ultrathin ALD silicon nitride and its potential as a hole-selective nanolayer for high efficiency solar cells |
| title_full_unstemmed | Optoelectronic properties of ultrathin ALD silicon nitride and its potential as a hole-selective nanolayer for high efficiency solar cells |
| title_short | Optoelectronic properties of ultrathin ALD silicon nitride and its potential as a hole-selective nanolayer for high efficiency solar cells |
| title_sort | optoelectronic properties of ultrathin ald silicon nitride and its potential as a hole selective nanolayer for high efficiency solar cells |
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