Optoelectronic properties of ultrathin ALD silicon nitride and its potential as a hole-selective nanolayer for high efficiency solar cells
<p>Fully exploiting the power conversion efficiency limit of silicon solar cells requires the use of passivating contacts that minimize electrical losses at metal/silicon interfaces. An efficient hole-selective passivating contact remains one of the key challenges for this technology to be dep...
| المؤلفون الرئيسيون: | , , , , , , |
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| التنسيق: | Journal article |
| اللغة: | English |
| منشور في: |
AIP Publishing
2020
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