CHEMICAL EFFECTS ON GRAIN BOUNDARY MIGRATION IN Si AND Ge.
Atomic mobility is very low in elemental semiconductors in the solid state. Consequently in contrast to metals, amorphous silicon can be made by CVD and both crystallization and grain growth are sluggish processes. Heavy doping with P or As enhances boundary mobility at elevated temperatures (T grea...
| Main Authors: | , |
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| Format: | Journal article |
| Language: | English |
| Published: |
Japan Inst of Metals
1986
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