PHOTOLUMINESCENCE AT HIGH-PRESSURES FROM HIGHLY STRAINED MOVPE GROWN GAAS/GASB/GAAS HETEROSTRUCTURES

PHOTOLUMINESCENCE AT HIGH-PRESSURES FROM HIGHLY STRAINED MOVPE GROWN GAAS/GASB/GAAS HETEROSTRUCTURES

Bibliografiske detaljer
Main Authors:	Warburton, R, Beales, T, Mason, N, Nicholas, R, Walker, P
Format:	Journal article
Udgivet:	1991

Lignende værker

GASB HETEROSTRUCTURES GROWN BY MOVPE
af: Chidley, E, et al.
Udgivet: (1988)

ABSORPTION CHARACTERISTICS OF GASB/INAS AND INSB/INAS SLSS GROWN ON (111) GAAS BY MOVPE
af: Lakrimi, M, et al.
Udgivet: (1991)

OPTIMIZATION OF THE GROWTH BY MOVPE OF STRAINED GASB/INAS DOUBLE HETEROJUNCTIONS AND SUPERLATTICES ON [111] GAAS SUBSTRATES
af: Lakrimi, M, et al.
Udgivet: (1992)

Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE
af: Maxim A. Ladugin, et al.
Udgivet: (2019-06-01)

GAAS/GASB STRAINED-LAYER HETEROSTRUCTURES DEPOSITED BY METALORGANIC VAPOR-PHASE EPITAXY
af: Chidley, E, et al.
Udgivet: (1989)

GASB/INAS HETEROJUNCTIONS GROWN BY MOVPE
af: Haywood, S, et al.
Udgivet: (1991)

GROWTH OF GASB BY MOVPE
af: Haywood, S, et al.
Udgivet: (1988)

LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD
af: Mallard, R, et al.
Udgivet: (1989)

LATTICE-RELAXATION OF STRAINED GASB GAAS EPITAXIAL LAYERS GROWN BY MOCVD
af: Mallard, R, et al.
Udgivet: (1989)

GaAs high temperature optical constants and application to optical monitoring within the MOVPE environment
af: Allwood, D, et al.
Udgivet: (2000)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE
af: Roslan, Sharizar, et al.
Udgivet: (2006)

Growth parameters of InAs/GaAs quantum dots grown by MOVPE /
af: Zulkafli Othaman, author, et al.
Udgivet: (2007)

Arsenic Diffusion in MOVPE‐Grown GaAs/Ge Epitaxial Structures
af: V. Orejuela, et al.
Udgivet: (2024-09-01)

GASB INAS HETEROJUNCTIONS GROWN BY MOVPE - EFFECT OF GAS SWITCHING SEQUENCES ON INTERFACE QUALITY
af: Lakrimi, M, et al.
Udgivet: (1991)

Photoluminescence studies of individual and few GaSb/GaAs quantum rings
af: M. P. Young, et al.
Udgivet: (2014-11-01)

THERMOELECTRIC-POWER OF GAAS-GAA1AS HETEROSTRUCTURES IN HIGH MAGNETIC-FIELDS
af: Vuong, T, et al.
Udgivet: (1986)

Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy
af: T. Kawazu, et al.
Udgivet: (2016-04-01)

PHOTOLUMINESCENCE OF GASB GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY
af: Chidley, E, et al.
Udgivet: (1991)

CYCLOTRON-RESONANCE IN INAS/GASB HETEROSTRUCTURES
af: Sundaram, G, et al.
Udgivet: (1992)

Magneto-photoluminescence study of InGaAs/GaAs quantum wells and quantum dots grown on (111)B GaAs substrate
af: Tyan, S, et al.
Udgivet: (2000)

HIGH-PRESSURE INVESTIGATION OF GASB AND GA1-XINXSB/GASB QUANTUM-WELLS
af: Warburton, R, et al.
Udgivet: (1991)

ELECTROLUMINESCENCE OUT TO 2.1 MU-M OBSERVED IN GASB/IN(X)GA(1-X)SB QUANTUM-WELLS GROWN BY MOVPE
af: Krier, A, et al.
Udgivet: (1994)

High performance GaAs/AlGaAs radial heterostructure nanowires grown by MOCVD
af: Jiang, N, et al.
Udgivet: (2013)

TIME-RESOLVED PHOTOLUMINESCENCE OF TWO-DIMENSIONAL HOT CARRIERS IN GAAS-ALGAAS HETEROSTRUCTURES
af: Ryan, J, et al.
Udgivet: (1984)

Magneto-photoluminescence of GaAs/AlGaAs heterojunctions under hydrostatic pressure
af: Priest, A, et al.
Udgivet: (1998)

MAGNETOTRANSPORT STUDIES OF GASB/INAS CROSSED GAP HETEROSTRUCTURES IN HIGH MAGNETIC-FIELDS
af: Dalton, K, et al.
Udgivet: (1993)

Time-resolved photoluminescence of two-dimensional hot carriers in GaAs-AlGaAs heterostructures
af: Ryan, J, et al.
Udgivet: (1984)

Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations
af: Balakrishnan G, et al.
Udgivet: (2009-01-01)

STRAIN AND MINIBANDS IN INGAAS-GAAS SUPERLATTICES
af: Pulsford, N, et al.
Udgivet: (1991)

Nature of heterointerfaces in GaAs/InAs and InAs/GaAs axial nanowire heterostructures
af: Paladugu, M, et al.
Udgivet: (2008)

INTERACTION OF ELECTRONS WITH INTERFACE PHONONS IN GAAS/ALAS AND GAAS/ALGAAS HETEROSTRUCTURES
af: Lugli, P, et al.
Udgivet: (1992)

Growth of InAs/GaSb strained layer superlattices by MOVPE .3. Use of UV absorption to monitor alkyl stability in the reactor
af: Booker, G, et al.
Udgivet: (1997)

Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs Interlayers
af: Akihiro Ohtake, et al.
Udgivet: (2018-11-01)

Improved photoluminescence from electrochemically passivated GaSb
af: Salesse, A, et al.
Udgivet: (1997)

InAs/GaSb Superlattice Based Mid-Infrared Interband Cascade Photodetectors Grown on Both Native GaSb and Lattice-Mismatched GaAs Substrates
af: Klaudia Hackiewicz, et al.
Udgivet: (2019-10-01)

Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy
af: D. Benyahia, et al.
Udgivet: (2018-07-01)

MOVPE grown self-assembled and self-ordered InSb quantum dots in a GaSb matrix assessed by AFM, CTEM, HRTEM and PL
af: Mock, P, et al.
Udgivet: (2001)

The indentation response of GaAs-AlAs heterostructures
af: Castell, M, et al.
Udgivet: (1996)

PHOTOLUMINESCENCE SPECTROSCOPY OF INCOMPRESSIBLE ELECTRON LIQUID STATES IN GAAS
af: Ryan, J, et al.
Udgivet: (1993)

GASB GAINSB QUANTUM WELLS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
af: Haywood, S, et al.
Udgivet: (1989)