STIMULATED RECOMBINATION AND THE DYNAMIC MOTT TRANSITION IN GaTe.
The dynamics of photoexcited carriers in direct gap semiconductors can now be measured directly by time-resolved spectroscopy using intense, ultra-short laser pulses. High carrier densities can be generated and the processes of carrier cooling and recombination can be investigated by measuring band-...
| Prif Awduron: | , , |
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| Fformat: | Journal article |
| Iaith: | English |
| Cyhoeddwyd: |
Springer-Verlag
1985
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