Comparison of fast switching high current power devices
New GaN and SiC wide bandgap power devices offer impressively fast switching performance compared to their traditional Silicon counterparts. However, Silicon devices have not stood still, and new generations of these devices offer excellent performance at competitive prices. This paper makes a compa...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Conference item |
| Language: | English |
| Published: |
VDE
2021
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