Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells
A way of analyzing the data in a variable stripe length method gain experiment is presented. We confirm that the stripe length dependence of the gain in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells is caused by the change of the chemical potential along the excited stripe due to the interactio...
| Main Authors: | , , , , |
|---|---|
| Format: | Journal article |
| Language: | English |
| Published: |
2001
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