Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells
A way of analyzing the data in a variable stripe length method gain experiment is presented. We confirm that the stripe length dependence of the gain in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells is caused by the change of the chemical potential along the excited stripe due to the interactio...
| Main Authors: | , , , , |
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| Format: | Journal article |
| Language: | English |
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2001
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| _version_ | 1797059203532062720 |
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| author | Kyhm, K Taylor, R Ryan, J Someya, T Arakawa, Y |
| author_facet | Kyhm, K Taylor, R Ryan, J Someya, T Arakawa, Y |
| author_sort | Kyhm, K |
| collection | OXFORD |
| description | A way of analyzing the data in a variable stripe length method gain experiment is presented. We confirm that the stripe length dependence of the gain in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells is caused by the change of the chemical potential along the excited stripe due to the interaction of the carrier and photon densities, and the gain threshold density is estimated. A trial function assuming a Lorentzian line shape for the stripe length dependence of the gain is compared with the edge emission intensity as a function of the stripe length. This is found to fit very well with our data, even beyond the saturation region. © 2001 American Institute of Physics. |
| first_indexed | 2024-03-06T20:00:52Z |
| format | Journal article |
| id | oxford-uuid:273f39eb-d378-420d-8212-a80592c14c41 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T20:00:52Z |
| publishDate | 2001 |
| record_format | dspace |
| spelling | oxford-uuid:273f39eb-d378-420d-8212-a80592c14c412022-03-26T12:05:48ZAnalysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wellsJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:273f39eb-d378-420d-8212-a80592c14c41EnglishSymplectic Elements at Oxford2001Kyhm, KTaylor, RRyan, JSomeya, TArakawa, YA way of analyzing the data in a variable stripe length method gain experiment is presented. We confirm that the stripe length dependence of the gain in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells is caused by the change of the chemical potential along the excited stripe due to the interaction of the carrier and photon densities, and the gain threshold density is estimated. A trial function assuming a Lorentzian line shape for the stripe length dependence of the gain is compared with the edge emission intensity as a function of the stripe length. This is found to fit very well with our data, even beyond the saturation region. © 2001 American Institute of Physics. |
| spellingShingle | Kyhm, K Taylor, R Ryan, J Someya, T Arakawa, Y Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells |
| title | Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells |
| title_full | Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells |
| title_fullStr | Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells |
| title_full_unstemmed | Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells |
| title_short | Analysis of gain saturation in In0.02Ga0.98N/In0.16Ga0.84N multiple quantum wells |
| title_sort | analysis of gain saturation in in0 02ga0 98n in0 16ga0 84n multiple quantum wells |
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