InGaN super-lattice growth for fabrication of quantum dot containing microdisks
Microstructural characterisation of a heterostructure containing an In xGa1-xN/InyGa1-yN super-lattice sacrificial layer (SSL), an AlGaN etch stop layer and an InGaN quantum dot layer has been carried out. These structures are intended for photo-electrochemical etch mediated fabrication of undercut...
| Main Authors: | , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
2011
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