InGaN super-lattice growth for fabrication of quantum dot containing microdisks

Microstructural characterisation of a heterostructure containing an In xGa1-xN/InyGa1-yN super-lattice sacrificial layer (SSL), an AlGaN etch stop layer and an InGaN quantum dot layer has been carried out. These structures are intended for photo-electrochemical etch mediated fabrication of undercut...

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Main Authors: El-Ella, H, Rol, F, Collins, D, Kappers, M, Taylor, R, Hu, E, Oliver, R
Format: Journal article
Language:English
Published: 2011
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author El-Ella, H
Rol, F
Collins, D
Kappers, M
Taylor, R
Hu, E
Oliver, R
author_facet El-Ella, H
Rol, F
Collins, D
Kappers, M
Taylor, R
Hu, E
Oliver, R
author_sort El-Ella, H
collection OXFORD
description Microstructural characterisation of a heterostructure containing an In xGa1-xN/InyGa1-yN super-lattice sacrificial layer (SSL), an AlGaN etch stop layer and an InGaN quantum dot layer has been carried out. These structures are intended for photo-electrochemical etch mediated fabrication of undercut microdisks and were found to generate additional dislocations due to the additional strain energy imposed by the growth and inclusion of the InGaN quantum dot layer. Micro-photoluminescence was also carried out and showed the unexpected formation of quantum dots within the SSL. An equilibrium critical stack thickness model corresponding to the total thickness of the heterostructure that would favour the additional generation of dislocations was formulated through an energy-balance consideration. This correlated well with the experimental results and a prediction of the SSL indium composition for the full structure that would not lead to additional dislocation generation could thus be made. © 2011 Elsevier B.V. All rights reserved.
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spelling oxford-uuid:27ac3dd6-e875-4b80-af97-4e45026f8bb92022-03-26T12:08:21ZInGaN super-lattice growth for fabrication of quantum dot containing microdisksJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:27ac3dd6-e875-4b80-af97-4e45026f8bb9EnglishSymplectic Elements at Oxford2011El-Ella, HRol, FCollins, DKappers, MTaylor, RHu, EOliver, RMicrostructural characterisation of a heterostructure containing an In xGa1-xN/InyGa1-yN super-lattice sacrificial layer (SSL), an AlGaN etch stop layer and an InGaN quantum dot layer has been carried out. These structures are intended for photo-electrochemical etch mediated fabrication of undercut microdisks and were found to generate additional dislocations due to the additional strain energy imposed by the growth and inclusion of the InGaN quantum dot layer. Micro-photoluminescence was also carried out and showed the unexpected formation of quantum dots within the SSL. An equilibrium critical stack thickness model corresponding to the total thickness of the heterostructure that would favour the additional generation of dislocations was formulated through an energy-balance consideration. This correlated well with the experimental results and a prediction of the SSL indium composition for the full structure that would not lead to additional dislocation generation could thus be made. © 2011 Elsevier B.V. All rights reserved.
spellingShingle El-Ella, H
Rol, F
Collins, D
Kappers, M
Taylor, R
Hu, E
Oliver, R
InGaN super-lattice growth for fabrication of quantum dot containing microdisks
title InGaN super-lattice growth for fabrication of quantum dot containing microdisks
title_full InGaN super-lattice growth for fabrication of quantum dot containing microdisks
title_fullStr InGaN super-lattice growth for fabrication of quantum dot containing microdisks
title_full_unstemmed InGaN super-lattice growth for fabrication of quantum dot containing microdisks
title_short InGaN super-lattice growth for fabrication of quantum dot containing microdisks
title_sort ingan super lattice growth for fabrication of quantum dot containing microdisks
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AT rolf ingansuperlatticegrowthforfabricationofquantumdotcontainingmicrodisks
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AT kappersm ingansuperlatticegrowthforfabricationofquantumdotcontainingmicrodisks
AT taylorr ingansuperlatticegrowthforfabricationofquantumdotcontainingmicrodisks
AT hue ingansuperlatticegrowthforfabricationofquantumdotcontainingmicrodisks
AT oliverr ingansuperlatticegrowthforfabricationofquantumdotcontainingmicrodisks