InGaN super-lattice growth for fabrication of quantum dot containing microdisks

InGaN super-lattice growth for fabrication of quantum dot containing microdisks

Show other versions (1)

Microstructural characterisation of a heterostructure containing an In xGa1-xN/InyGa1-yN super-lattice sacrificial layer (SSL), an AlGaN etch stop layer and an InGaN quantum dot layer has been carried out. These structures are intended for photo-electrochemical etch mediated fabrication of undercut...

Full description

Bibliographic Details
Main Authors:	El-Ella, H, Rol, F, Collins, D, Kappers, M, Taylor, R, Hu, E, Oliver, R
Format:	Journal article
Language:	English
Published:	2011

Similar Items

InGaN super-lattice growth for fabrication of quantum dot containing microdisks
by: El-Ella, H, et al.
Published: (2011)

Growth and optical characterisation of multilayers of InGaN quantum dots
by: Zhu, T, et al.
Published: (2012)

Growth of InGaN quantum dots with AlGaN barrier layers via modified droplet epitaxy
by: Oliver, R, et al.
Published: (2013)

Optical cavity efficacy and lasing of focused ion beam milled GaN/InGaN micropillars
by: El-Ella, H, et al.
Published: (2012)

Electrically driven single InGaN/GaN quantum dot emission
by: Jarjour, A, et al.
Published: (2008)

Dynamics of single InGaN quantum dots
by: Taylor, R, et al.
Published: (2004)

Two-photon autocorrelation measurements on a single InGaN/GaN quantum dot.
by: Collins, D, et al.
Published: (2009)

Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot
by: Jarjour, A, et al.
Published: (2007)

Control of the oscillator strength of the exciton in a single InGaN-GaN quantum dot.
by: Jarjour, A, et al.
Published: (2007)

Non-linear excitation and correlation studies of single InGaN quantum dots
by: Collins, D, et al.
Published: (2009)

Non-linear excitation and correlation studies of single InGaN quantum dots
by: Collins, D, et al.
Published: (2009)

Temporal variation in photoluminescence from single InGaN quantum dots
by: Rice, J, et al.
Published: (2004)

Time-resolved dynamics in single InGaN quantum dots
by: Robinson, J, et al.
Published: (2003)

Two-photon absorption from single InGaN/GaN quantum dots
by: Jarjour, A, et al.
Published: (2006)

Optical studies of non-linear absorption in single InGaN/GaN quantum dots
by: Jarjour, A, et al.
Published: (2007)

Cavity-enhanced blue single-photon emission from a single InGaN/GaN quantum dot
by: Jarjour, A, et al.
Published: (2007)

Growth of InGaN quantum dots on GaN by MOVPE, employing a growth temperature nitrogen anneal
by: Oliver, R, et al.
Published: (2003)

Progress in the optical studies of single InGaN/GaN quantum dots
by: Jarjour, A, et al.
Published: (2007)

Growth modes in heteroepitaxy of InGaN on GaN
by: Oliver, R, et al.
Published: (2005)

Photoluminescence studies of exciton recombination and dephasing in single InGaN quantum dots
by: Rice, J, et al.
Published: (2004)

Simulation of the quantum-confined stark effect in a single InGaN quantum dot
by: Lee, K, et al.
Published: (2004)

Time-resolved dynamics in single InGaN quantum dots
by: Taylor, R, et al.
Published: (2005)

InGaN quantum dots grown by MOVPE via a droplet epitaxy route
by: Rice, J, et al.
Published: (2004)

Time-integrated and time-resolved photoluminescence studies of InGaN quantum dots
by: Robinson, J, et al.
Published: (2004)

Growth and assessment of InGaN quantum dots in a microcavity: A blue single photon source
by: Oliver, R, et al.
Published: (2008)

The influence of ammonia on the growth mode in InGaN/GaN heteroepitaxy
by: Oliver, R, et al.
Published: (2004)

Temperature-dependent fine structure splitting in InGaN quantum dots
by: Wang, T, et al.
Published: (2017)

Experimental and theoretical study of the quantum-confined Stark effect in a single InGaN/GaN quantum dot under applied vertical electric field
by: Jarjour, A, et al.
Published: (2008)

High temperature stability in non-polar (11-20) InGaN quantum dots: Exciton and biexciton dynamics
by: Reid, B, et al.
Published: (2014)

InGaN quantum dots grown by metalorganic vapor phase epitaxy employing a post-growth nitrogen anneal
by: Oliver, R, et al.
Published: (2003)

Luminescence properties of isolated InGaN/GaN quantum dots
by: Martin, R, et al.
Published: (2005)

Theoretical and experimental analysis of radiative recombination lifetimes in nonpolar InGaN/GaN quantum dots
by: Kanta Patra, S, et al.
Published: (2017)

Non-polar (11-20) InGaN quantum dots with short exciton lifetimes grown by metal-organic vapor phase epitaxy
by: Zhu, T, et al.
Published: (2013)

Origins of Spectral Diffusion in the Micro-Photoluminescence of Single InGaN Quantum Dots
by: Reid, B, et al.
Published: (2013)

Three-photon excitation of InGaN quantum dots
by: Villafane, V, et al.
Published: (2023)

Observations of Rabi oscillations in a non-polar InGaN quantum dot
by: Reid, B, et al.
Published: (2014)

Carrier localization mechanisms in InGaN/GaN quantum wells
by: Watson-Parris, D, et al.
Published: (2011)

Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field
by: Robinson, J, et al.
Published: (2005)

Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field
by: Robinson, J, et al.
Published: (2005)

Ultrafast, polarized, single-photon emission from m-plane InGaN Quantum Dots on GaN nanowires
by: Puchtler, T, et al.
Published: (2016)