Skip to content
VuFind
English
Deutsch
Español
Français
Italiano
日本語
Nederlands
Português
Português (Brasil)
中文(简体)
中文(繁體)
Türkçe
עברית
Gaeilge
Cymraeg
Ελληνικά
Català
Euskara
Русский
Čeština
Suomi
Svenska
polski
Dansk
slovenščina
اللغة العربية
বাংলা
Galego
Tiếng Việt
Hrvatski
हिंदी
Հայերէն
Українська
Sámegiella
Монгол
Language
All Fields
Title
Author
Subject
Call Number
ISBN/ISSN
Tag
Find
Advanced
Deactivation and diffusion of...
Cite this
Text this
Email this
Print
Export Record
Export to RefWorks
Export to EndNoteWeb
Export to EndNote
Permanent link
Deactivation and diffusion of boron in ion-implanted silicon studied by secondary electron imaging
Show other versions (1)
Bibliographic Details
Main Authors:
Castell, M
,
Simpson, T
,
Mitchell, I
,
Perovic, D
,
Baribeau, J
Format:
Journal article
Published:
1999
Holdings
Description
Other Versions (1)
Similar Items
Staff View
Similar Items
Deactivation and diffusion of boron in ion-implanted silicon studied by secondary electron imaging
by: Castell, M, et al.
Published: (1999)
Deactivation and diffusion of boron in ion-implanted silicon: dopant mapping through secondary electron imaging
by: Castell, M, et al.
Published: (1999)
Electronic contribution to secondary electron compositional contrast in the scanning electron microscope
by: Castell, M, et al.
Published: (1997)
Deactivation of metastable single-crystal silicon hyperdoped with sulfur
by: Krich, Jacob J., et al.
Published: (2015)
THE ELASTIC PROPERTIES OF ION-IMPLANTED SILICON
by: Burnett, P, et al.
Published: (1986)