Deactivation and diffusion of boron in ion-implanted silicon studied by secondary electron imaging
Egile Nagusiak: | Castell, M, Simpson, T, Mitchell, I, Perovic, D, Baribeau, J |
---|---|
Formatua: | Journal article |
Argitaratua: |
1999
|
Antzeko izenburuak
-
Deactivation and diffusion of boron in ion-implanted silicon studied by secondary electron imaging
nork: Castell, M, et al.
Argitaratua: (1999) -
Deactivation and diffusion of boron in ion-implanted silicon: dopant mapping through secondary electron imaging
nork: Castell, M, et al.
Argitaratua: (1999) -
Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
nork: Verena Steckenreiter, et al.
Argitaratua: (2017-03-01) -
Plasma immersion ion implantation of boron for ribbon silicon solar cells
nork: Derbouz K., et al.
Argitaratua: (2013-09-01) -
The Modeling of the Radiation Enhanced Diffusion of Boron in Silicon
nork: Gadiyak, G.V., et al.
Argitaratua: (1994-06-01)