Deactivation and diffusion of boron in ion-implanted silicon studied by secondary electron imaging

Samankaltaisia teoksia

• Deactivation and diffusion of boron in ion-implanted silicon studied by secondary electron imaging
  Tekijä: Castell, M, et al.
  Julkaistu: (1999)
• Deactivation and diffusion of boron in ion-implanted silicon: dopant mapping through secondary electron imaging
  Tekijä: Castell, M, et al.
  Julkaistu: (1999)
• Kinetics of the permanent deactivation of the boron-oxygen complex in crystalline silicon as a function of illumination intensity
  Tekijä: Verena Steckenreiter, et al.
  Julkaistu: (2017-03-01)
• Plasma immersion ion implantation of boron for ribbon silicon solar cells
  Tekijä: Derbouz K., et al.
  Julkaistu: (2013-09-01)
• The Modeling of the Radiation Enhanced Diffusion of Boron in Silicon
  Tekijä: Gadiyak, G.V., et al.
  Julkaistu: (1994-06-01)