CHEMICAL-VAPOR-DEPOSITION OF DIAMOND FROM A NOVEL CAPACITIVELY COUPLED RF PLASMA SOURCE
Capacitively coupled (CC) (r.f.) plasmas offer major advantages over microwave-induced plasmas for the growth of large area homogeneous thin films. However, conventionally designed CC r.f. sources lead, at best, to extremely poor quality material when diamond growth is attempted. The first complete...
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| Format: | Conference item |
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1995
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| _version_ | 1826264147057180672 |
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| author | Jackman, R Beckman, J Foord, J |
| author_facet | Jackman, R Beckman, J Foord, J |
| author_sort | Jackman, R |
| collection | OXFORD |
| description | Capacitively coupled (CC) (r.f.) plasmas offer major advantages over microwave-induced plasmas for the growth of large area homogeneous thin films. However, conventionally designed CC r.f. sources lead, at best, to extremely poor quality material when diamond growth is attempted. The first complete diamond overlayer to be grown with CC r.f. is reported here, where a novel magnetically enhanced source with ring electrodes has been used. The potential of this technique for the growth of high quality diamond films is discussed. © 1995. |
| first_indexed | 2024-03-06T20:03:05Z |
| format | Conference item |
| id | oxford-uuid:27fc2c7a-f833-4889-b704-af485919ce65 |
| institution | University of Oxford |
| last_indexed | 2024-03-06T20:03:05Z |
| publishDate | 1995 |
| record_format | dspace |
| spelling | oxford-uuid:27fc2c7a-f833-4889-b704-af485919ce652022-03-26T12:10:05ZCHEMICAL-VAPOR-DEPOSITION OF DIAMOND FROM A NOVEL CAPACITIVELY COUPLED RF PLASMA SOURCEConference itemhttp://purl.org/coar/resource_type/c_5794uuid:27fc2c7a-f833-4889-b704-af485919ce65Symplectic Elements at Oxford1995Jackman, RBeckman, JFoord, JCapacitively coupled (CC) (r.f.) plasmas offer major advantages over microwave-induced plasmas for the growth of large area homogeneous thin films. However, conventionally designed CC r.f. sources lead, at best, to extremely poor quality material when diamond growth is attempted. The first complete diamond overlayer to be grown with CC r.f. is reported here, where a novel magnetically enhanced source with ring electrodes has been used. The potential of this technique for the growth of high quality diamond films is discussed. © 1995. |
| spellingShingle | Jackman, R Beckman, J Foord, J CHEMICAL-VAPOR-DEPOSITION OF DIAMOND FROM A NOVEL CAPACITIVELY COUPLED RF PLASMA SOURCE |
| title | CHEMICAL-VAPOR-DEPOSITION OF DIAMOND FROM A NOVEL CAPACITIVELY COUPLED RF PLASMA SOURCE |
| title_full | CHEMICAL-VAPOR-DEPOSITION OF DIAMOND FROM A NOVEL CAPACITIVELY COUPLED RF PLASMA SOURCE |
| title_fullStr | CHEMICAL-VAPOR-DEPOSITION OF DIAMOND FROM A NOVEL CAPACITIVELY COUPLED RF PLASMA SOURCE |
| title_full_unstemmed | CHEMICAL-VAPOR-DEPOSITION OF DIAMOND FROM A NOVEL CAPACITIVELY COUPLED RF PLASMA SOURCE |
| title_short | CHEMICAL-VAPOR-DEPOSITION OF DIAMOND FROM A NOVEL CAPACITIVELY COUPLED RF PLASMA SOURCE |
| title_sort | chemical vapor deposition of diamond from a novel capacitively coupled rf plasma source |
| work_keys_str_mv | AT jackmanr chemicalvapordepositionofdiamondfromanovelcapacitivelycoupledrfplasmasource AT beckmanj chemicalvapordepositionofdiamondfromanovelcapacitivelycoupledrfplasmasource AT foordj chemicalvapordepositionofdiamondfromanovelcapacitivelycoupledrfplasmasource |