Formation and healing of defects in atomically thin GaSe and InSe
Two dimensional III–VI metal monochalcogenide materials, such as GaSe and InSe, are attracting considerable attention due to their promising electronic and optoelectronic properties. Here, an investigation of point and extended atomic defects formed in mono-, bi-, and few-layer GaSe and InSe crystal...
| Main Authors: | , , , , , , , , , , , , , , , |
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| Format: | Journal article |
| Language: | English |
| Published: |
American Chemical Society
2019
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