Atom probe tomography of a cu-doped TiNiSn thermoelectric material: nanoscale structure and optimisation of analysis conditions

Atom probe tomography of a cu-doped TiNiSn thermoelectric material: nanoscale structure and optimisation of analysis conditions

Cu-doping and crystallographic site occupations within the half-Heusler TiNiSn, a promising thermoelectric material, have been examined by Atom Probe Tomography (APT). In particular, this investigation aims to better understand the influence of atom probe analysis conditions on the measured chemical...

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מידע ביבליוגרפי
Main Authors: Henry, H, Halpin, J, Popuri, S, Daly, L, Bos, J-W, Moody, M, MacLaren, D, Bagot, PAG
פורמט: Journal article
שפה:English
יצא לאור: Cambridge University Press 2021

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