Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization.

The effects of AlGaAs shell thickness and growth time on the minority carrier lifetime in the GaAs core of GaAs/AlGaAs core-shell nanowires grown by metal-organic chemical vapor deposition are investigated. The carrier lifetime increases with increasing AlGaAs shell thickness up to a certain value a...

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Glavni autori: Jiang, N, Gao, Q, Parkinson, P, Wong-Leung, J, Mokkapati, S, Breuer, S, Tan, H, Zheng, C, Etheridge, J, Jagadish, C
Format: Journal article
Jezik:English
Izdano: 2013
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author Jiang, N
Gao, Q
Parkinson, P
Wong-Leung, J
Mokkapati, S
Breuer, S
Tan, H
Zheng, C
Etheridge, J
Jagadish, C
author_facet Jiang, N
Gao, Q
Parkinson, P
Wong-Leung, J
Mokkapati, S
Breuer, S
Tan, H
Zheng, C
Etheridge, J
Jagadish, C
author_sort Jiang, N
collection OXFORD
description The effects of AlGaAs shell thickness and growth time on the minority carrier lifetime in the GaAs core of GaAs/AlGaAs core-shell nanowires grown by metal-organic chemical vapor deposition are investigated. The carrier lifetime increases with increasing AlGaAs shell thickness up to a certain value as a result of reducing tunneling probability of carriers through the AlGaAs shell, beyond which the carrier lifetime reduces due to the diffusion of Ga-Al and/or impurities across the GaAs/AlGaAs heterointerface. Interdiffusion at the heterointerface is observed directly using high-angle annular dark field scanning transmission electron microscopy. We achieve room temperature minority carrier lifetimes of 1.9 ns by optimizing the shell growth with the intention of reducing the effect of interdiffusion.
first_indexed 2024-03-06T20:11:48Z
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last_indexed 2024-03-06T20:11:48Z
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spelling oxford-uuid:2ad78489-62e5-4ad7-a1f5-4781f0bc40d92022-03-26T12:27:20ZEnhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization.Journal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:2ad78489-62e5-4ad7-a1f5-4781f0bc40d9EnglishSymplectic Elements at Oxford2013Jiang, NGao, QParkinson, PWong-Leung, JMokkapati, SBreuer, STan, HZheng, CEtheridge, JJagadish, CThe effects of AlGaAs shell thickness and growth time on the minority carrier lifetime in the GaAs core of GaAs/AlGaAs core-shell nanowires grown by metal-organic chemical vapor deposition are investigated. The carrier lifetime increases with increasing AlGaAs shell thickness up to a certain value as a result of reducing tunneling probability of carriers through the AlGaAs shell, beyond which the carrier lifetime reduces due to the diffusion of Ga-Al and/or impurities across the GaAs/AlGaAs heterointerface. Interdiffusion at the heterointerface is observed directly using high-angle annular dark field scanning transmission electron microscopy. We achieve room temperature minority carrier lifetimes of 1.9 ns by optimizing the shell growth with the intention of reducing the effect of interdiffusion.
spellingShingle Jiang, N
Gao, Q
Parkinson, P
Wong-Leung, J
Mokkapati, S
Breuer, S
Tan, H
Zheng, C
Etheridge, J
Jagadish, C
Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization.
title Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization.
title_full Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization.
title_fullStr Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization.
title_full_unstemmed Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization.
title_short Enhanced minority carrier lifetimes in GaAs/AlGaAs core-shell nanowires through shell growth optimization.
title_sort enhanced minority carrier lifetimes in gaas algaas core shell nanowires through shell growth optimization
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