Simulation of terahertz generation at semiconductor surfaces
A three-dimensional semiclassical Monte Carlo model is presented to describe fast carrier dynamics in semiconductors after photoexcitation. Far-field terahertz (THz) radiation patterns are calculated for both InAs and GaAs with, and without, application of external magnetic fields. This analysis dis...
| Автори: | , , , , |
|---|---|
| Формат: | Journal article |
| Мова: | English |
| Опубліковано: |
2002
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