Simulation of terahertz generation at semiconductor surfaces
A three-dimensional semiclassical Monte Carlo model is presented to describe fast carrier dynamics in semiconductors after photoexcitation. Far-field terahertz (THz) radiation patterns are calculated for both InAs and GaAs with, and without, application of external magnetic fields. This analysis dis...
| Main Authors: | , , , , |
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| Format: | Journal article |
| Language: | English |
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2002
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| _version_ | 1797060033888911360 |
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| author | Johnston, M Whittaker, D Corchia, A Davies, A Linfield, E |
| author_facet | Johnston, M Whittaker, D Corchia, A Davies, A Linfield, E |
| author_sort | Johnston, M |
| collection | OXFORD |
| description | A three-dimensional semiclassical Monte Carlo model is presented to describe fast carrier dynamics in semiconductors after photoexcitation. Far-field terahertz (THz) radiation patterns are calculated for both InAs and GaAs with, and without, application of external magnetic fields. This analysis distinguishes between surface depletion field and photo-Dember mechanisms for generating THz radiation. The theoretical model reproduces experimental data from GaAs and InAs, and demonstrates that a magnetic field enhances THz emission by rotating the emitting dipole with respect to the sample surface, leading to an increased coupling of radiation through the surface. |
| first_indexed | 2024-03-06T20:12:04Z |
| format | Journal article |
| id | oxford-uuid:2ae85116-f80a-4159-9864-b0920cabdf40 |
| institution | University of Oxford |
| language | English |
| last_indexed | 2024-03-06T20:12:04Z |
| publishDate | 2002 |
| record_format | dspace |
| spelling | oxford-uuid:2ae85116-f80a-4159-9864-b0920cabdf402022-03-26T12:27:50ZSimulation of terahertz generation at semiconductor surfacesJournal articlehttp://purl.org/coar/resource_type/c_dcae04bcuuid:2ae85116-f80a-4159-9864-b0920cabdf40EnglishSymplectic Elements at Oxford2002Johnston, MWhittaker, DCorchia, ADavies, ALinfield, EA three-dimensional semiclassical Monte Carlo model is presented to describe fast carrier dynamics in semiconductors after photoexcitation. Far-field terahertz (THz) radiation patterns are calculated for both InAs and GaAs with, and without, application of external magnetic fields. This analysis distinguishes between surface depletion field and photo-Dember mechanisms for generating THz radiation. The theoretical model reproduces experimental data from GaAs and InAs, and demonstrates that a magnetic field enhances THz emission by rotating the emitting dipole with respect to the sample surface, leading to an increased coupling of radiation through the surface. |
| spellingShingle | Johnston, M Whittaker, D Corchia, A Davies, A Linfield, E Simulation of terahertz generation at semiconductor surfaces |
| title | Simulation of terahertz generation at semiconductor surfaces |
| title_full | Simulation of terahertz generation at semiconductor surfaces |
| title_fullStr | Simulation of terahertz generation at semiconductor surfaces |
| title_full_unstemmed | Simulation of terahertz generation at semiconductor surfaces |
| title_short | Simulation of terahertz generation at semiconductor surfaces |
| title_sort | simulation of terahertz generation at semiconductor surfaces |
| work_keys_str_mv | AT johnstonm simulationofterahertzgenerationatsemiconductorsurfaces AT whittakerd simulationofterahertzgenerationatsemiconductorsurfaces AT corchiaa simulationofterahertzgenerationatsemiconductorsurfaces AT daviesa simulationofterahertzgenerationatsemiconductorsurfaces AT linfielde simulationofterahertzgenerationatsemiconductorsurfaces |