The processing at low temperatures of Tl2Ba2Ca1Cu2Ox films in argon atmospheres for microwave devices
Epitaxial Tl-2212 films have been grown on LaAlO3, MgO and ceria-buffered R-plane sapphire using an ex-situ anneal step in argon atmospheres at temperatures of 720-740 degrees C. Films grown on LaAlO3 have T-c's of 101 - 105.5K, large-area J(c)'s of up to 2x10(5) Acm(-2) and surface resist...
| Main Authors: | , , , , , , , |
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| Format: | Conference item |
| Published: |
1995
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