The processing at low temperatures of Tl2Ba2Ca1Cu2Ox films in argon atmospheres for microwave devices

The processing at low temperatures of Tl2Ba2Ca1Cu2Ox films in argon atmospheres for microwave devices

Epitaxial Tl-2212 films have been grown on LaAlO3, MgO and ceria-buffered R-plane sapphire using an ex-situ anneal step in argon atmospheres at temperatures of 720-740 degrees C. Films grown on LaAlO3 have T-c's of 101 - 105.5K, large-area J(c)'s of up to 2x10(5) Acm(-2) and surface resist...

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Manylion Llyfryddiaeth
Prif Awduron: OConnor, J, Bramley, A, Morley, S, Jenkins, A, Doole, R, Grovenor, C, Goringe, M, DewHughes, D
Fformat: Conference item
Cyhoeddwyd: 1995
Disgrifiad
Crynodeb:Epitaxial Tl-2212 films have been grown on LaAlO3, MgO and ceria-buffered R-plane sapphire using an ex-situ anneal step in argon atmospheres at temperatures of 720-740 degrees C. Films grown on LaAlO3 have T-c's of 101 - 105.5K, large-area J(c)'s of up to 2x10(5) Acm(-2) and surface resistances (R(3)) as low as 3.7m Ohm (80K, 10GHz). TEM and HREM show the films to be well-aligned and relatively fault-free. Films grown on ceria-buffered R-plane sapphire have T-c's up to 100.5K and large-area J(c)'s up to 1x10(5) Acm(-2).

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