The processing at low temperatures of Tl2Ba2Ca1Cu2Ox films in argon atmospheres for microwave devices
Epitaxial Tl-2212 films have been grown on LaAlO3, MgO and ceria-buffered R-plane sapphire using an ex-situ anneal step in argon atmospheres at temperatures of 720-740 degrees C. Films grown on LaAlO3 have T-c's of 101 - 105.5K, large-area J(c)'s of up to 2x10(5) Acm(-2) and surface resist...
| Main Authors: | , , , , , , , |
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| Format: | Conference item |
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1995
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| _version_ | 1797060138062839808 |
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| author | OConnor, J Bramley, A Morley, S Jenkins, A Doole, R Grovenor, C Goringe, M DewHughes, D |
| author_facet | OConnor, J Bramley, A Morley, S Jenkins, A Doole, R Grovenor, C Goringe, M DewHughes, D |
| author_sort | OConnor, J |
| collection | OXFORD |
| description | Epitaxial Tl-2212 films have been grown on LaAlO3, MgO and ceria-buffered R-plane sapphire using an ex-situ anneal step in argon atmospheres at temperatures of 720-740 degrees C. Films grown on LaAlO3 have T-c's of 101 - 105.5K, large-area J(c)'s of up to 2x10(5) Acm(-2) and surface resistances (R(3)) as low as 3.7m Ohm (80K, 10GHz). TEM and HREM show the films to be well-aligned and relatively fault-free. Films grown on ceria-buffered R-plane sapphire have T-c's up to 100.5K and large-area J(c)'s up to 1x10(5) Acm(-2). |
| first_indexed | 2024-03-06T20:13:18Z |
| format | Conference item |
| id | oxford-uuid:2b50489b-00db-44ff-9d86-5462dde572f7 |
| institution | University of Oxford |
| last_indexed | 2024-03-06T20:13:18Z |
| publishDate | 1995 |
| record_format | dspace |
| spelling | oxford-uuid:2b50489b-00db-44ff-9d86-5462dde572f72022-03-26T12:30:06ZThe processing at low temperatures of Tl2Ba2Ca1Cu2Ox films in argon atmospheres for microwave devicesConference itemhttp://purl.org/coar/resource_type/c_5794uuid:2b50489b-00db-44ff-9d86-5462dde572f7Symplectic Elements at Oxford1995OConnor, JBramley, AMorley, SJenkins, ADoole, RGrovenor, CGoringe, MDewHughes, DEpitaxial Tl-2212 films have been grown on LaAlO3, MgO and ceria-buffered R-plane sapphire using an ex-situ anneal step in argon atmospheres at temperatures of 720-740 degrees C. Films grown on LaAlO3 have T-c's of 101 - 105.5K, large-area J(c)'s of up to 2x10(5) Acm(-2) and surface resistances (R(3)) as low as 3.7m Ohm (80K, 10GHz). TEM and HREM show the films to be well-aligned and relatively fault-free. Films grown on ceria-buffered R-plane sapphire have T-c's up to 100.5K and large-area J(c)'s up to 1x10(5) Acm(-2). |
| spellingShingle | OConnor, J Bramley, A Morley, S Jenkins, A Doole, R Grovenor, C Goringe, M DewHughes, D The processing at low temperatures of Tl2Ba2Ca1Cu2Ox films in argon atmospheres for microwave devices |
| title | The processing at low temperatures of Tl2Ba2Ca1Cu2Ox films in argon atmospheres for microwave devices |
| title_full | The processing at low temperatures of Tl2Ba2Ca1Cu2Ox films in argon atmospheres for microwave devices |
| title_fullStr | The processing at low temperatures of Tl2Ba2Ca1Cu2Ox films in argon atmospheres for microwave devices |
| title_full_unstemmed | The processing at low temperatures of Tl2Ba2Ca1Cu2Ox films in argon atmospheres for microwave devices |
| title_short | The processing at low temperatures of Tl2Ba2Ca1Cu2Ox films in argon atmospheres for microwave devices |
| title_sort | processing at low temperatures of tl2ba2ca1cu2ox films in argon atmospheres for microwave devices |
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