APPLICATION OF HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY TO MBE GROWN GAAS(100)
Plasmon and phonon modes of silicon-doped MBE grown (100) oriented GaAs (n≈4×1018/cm3) have been observed by high-resolution electron-energy-loss spectroscopy (HREELS). A protective arsenic overlayer allowed transfer of samples from the MBE growth chamber to the HREELS system without contamination o...
| المؤلفون الرئيسيون: | , , , , |
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| التنسيق: | Journal article |
| اللغة: | English |
| منشور في: |
1987
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