Simulation of the 'brittle-ductile transition in silicon single crystals using dislocation mechanics' - Comment

Y.B. Xin and H.J. Hsia modeled the brittle-ductile transition in silicon single crystals by symmetric emission of edge dislocations at a crack tip in {110}〈110〉 oriented specimens on slip planes passing through the crack tip and normal to the cleavage plane. They took into account the dislocation/di...

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Detalhes bibliográficos
Principais autores: Hirsch, P, Roberts, S
Formato: Journal article
Idioma:English
Publicado em: Elsevier 1997