Simulation of the 'brittle-ductile transition in silicon single crystals using dislocation mechanics' - Comment
Y.B. Xin and H.J. Hsia modeled the brittle-ductile transition in silicon single crystals by symmetric emission of edge dislocations at a crack tip in {110}〈110〉 oriented specimens on slip planes passing through the crack tip and normal to the cleavage plane. They took into account the dislocation/di...
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| פורמט: | Journal article |
| שפה: | English |
| יצא לאור: |
Elsevier
1997
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