Ion irradiation of GeSi Si strained-layer heterostructures
The strain in GeSi/Si strained layer heterostructures is studied as a function of ion-irradiation and thermal annealing conditions and correlated with the defect microstructure in the GeSi alloy layer. For room temperature irradiation, compressive strain within the alloy layer increases with increas...
| Main Authors: | , , , , |
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| Format: | Conference item |
| Published: |
1999
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